SPACE-CHARGE REGION RECOMBINATION IN HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：29

作者：

PARIKH, CD

LINDHOLM, FA

机构：

[1] Department of Electrical Engineering, University of Florida, Gainesville, FL

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 10期

关键词：

D O I：

10.1109/16.158788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new comprehensive model for space-charge region (SCR) recombination current in abrupt and graded energy gap heterojunction bipolar transistors (HBT's) is derived. It is shown that if a spike is present in one of the bands at the heterojunction interface, the SCR recombination current becomes interrelated with the collector current. A previously proposed charge control model for the HBT is modified to include the SCR recombination current. The model is used to study SCR recombination characteristics in HBT's.

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收藏

页码：2197 / 2205

页数：9

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