Effect of multiplication layer width on breakdown voltage in InP/InGaAs avalanche photodiode

被引：22

作者：

Park, CY

Hyun, KS

Kang, SG

Kim, HM

机构：

[1] Optoelectronics Section, Electronics and Telecommunications Research Institute, Taejon 305-600

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 25期

关键词：

D O I：

10.1063/1.115384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Breakdown voltages of InP/InGaAs avalanche photodiodes have been analyzed with structure parameters, such as multiplication layer width (MLW) and absorption layer thickness. It is shown that there exists a critical MLW, w(0), where the breakdown voltage is the lowest. As MLW increases, the breakdown voltage increases slowly in the region of MLW greater than or equal to w(0) while the breakdown voltage decreases in the region of MLW less than or equal to w(0), It is also revealed that w(0) is a function of absorption layer thickness. The measured breakdown voltages having MLWs of 0.15-0.4 mu m were reported and compared to the calculated ones, which agreed very well with each other. (C) 1995 American Institute of Physics.

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页码：3789 / 3791

页数：3

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