A PLANAR INP/INGAAS AVALANCHE PHOTODIODE WITH FLOATING GUARD RING AND DOUBLE DIFFUSED JUNCTION

被引：107

作者：

LIU, Y ^{[1
]}

FORREST, SR ^{[1
]}

HLADKY, J ^{[1
]}

LANGE, MJ ^{[1
]}

ACKLEY, DE ^{[1
]}

机构：

[1] UNIV SO CALIF,CTR PHOTON TECHNOL,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1992年 / 10卷 / 02期

关键词：

D O I：

10.1109/50.120573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss the fabrication, performance, and design of a novel, planar In0.53Ga0.47As/InP separate absorption and multiplication region avalanche photodiode (SAM-APD) with floating guard rings and a double Zn diffused junction. The APD, grown by both vapor phase epitaxy and metalorganic vapor phase epitaxy, is observed to have a uniform gain of 85, a minimum primary dark current density of 5 x 10(-6) A/cm2 at 90% of breakdown, and a capacitance of 0.4 pF for a front-side illuminated device. Both experimental and analytical results show that the double-diffused floating guard ring structure prevents edge breakdown, and also greatly reduces the electric field along the semiconductor/insulator surface. The operation mechanisms and the optimum design of the planar APD based on a two-dimensional device model are discussed.

引用

页码：182 / 193

页数：12

共 36 条

[1] IN0.53GA0.47AS/INP FLOATING GUARD RING AVALANCHE PHOTODIODES FABRICATED BY DOUBLE DIFFUSION [J].

ACKLEY, DE ;

HLADKY, J ;

LANGE, MJ ;

MASON, S ;

ERICKSON, G ;

OLSEN, GH ;

BAN, VS ;

LIU, Y ;

FORREST, SR .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (08) :571-573

[2] CHARACTERISTICS OF GERMANIUM AVALANCHE PHOTO-DIODES IN WAVELENGTH REGION OF 1-1.6 MU-M [J].

ANDO, H ;

KANBE, H ;

KIMURA, T ;

YAMAOKA, T ;

KANEDA, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (11) :804-809

[3] HIGH-SPEED PLANAR INP/INGAAS AVALANCHE PHOTO-DIODE FABRICATED BY VAPOR-PHASE EPITAXY [J].

ANDO, H ;

YAMAUCHI, Y ;

SUSA, N .

ELECTRONICS LETTERS, 1983, 19 (14) :543-545

[4] IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN INP [J].

ARMIENTO, CA ;

GROVES, SH ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1979, 35 (04) :333-335

[5] BLOCKING CAPABILITY OF PLANAR DEVICES WITH FIELD LIMITING RINGS [J].

BRIEGER, KP ;

GERLACH, W ;

PELKA, J .

SOLID-STATE ELECTRONICS, 1983, 26 (08) :739-745

[6] HIGH-PERFORMANCE AVALANCHE PHOTO-DIODE WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS [J].

CAMPBELL, JC ;

DENTAI, AG ;

HOLDEN, WS ;

KASPER, BL .

ELECTRONICS LETTERS, 1983, 19 (20) :818-820

[7] HIGH-SPEED INP/INGAASP/INGAAS AVALANCHE PHOTODIODES GROWN BY CHEMICAL BEAM EPITAXY [J].

CAMPBELL, JC ;

TSANG, WT ;

QUA, GJ ;

JOHNSON, BC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (03) :496-500

[8]

CAPASSO F, 1985, SEMICONDUCTORS SEM D, V22

[9]

CHI GC, 1987, IEEE T ELECTRON DEV, V34, P2265

[10] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTS [J].

COOK, LW ;

BULMAN, GE ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :589-591

← 1 2 3 4 →