A PLANAR INP/INGAAS AVALANCHE PHOTODIODE WITH FLOATING GUARD RING AND DOUBLE DIFFUSED JUNCTION

被引：107

作者：

LIU, Y ^{[1
]}

FORREST, SR ^{[1
]}

HLADKY, J ^{[1
]}

LANGE, MJ ^{[1
]}

ACKLEY, DE ^{[1
]}

机构：

[1] UNIV SO CALIF,CTR PHOTON TECHNOL,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1992年 / 10卷 / 02期

关键词：

D O I：

10.1109/50.120573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss the fabrication, performance, and design of a novel, planar In0.53Ga0.47As/InP separate absorption and multiplication region avalanche photodiode (SAM-APD) with floating guard rings and a double Zn diffused junction. The APD, grown by both vapor phase epitaxy and metalorganic vapor phase epitaxy, is observed to have a uniform gain of 85, a minimum primary dark current density of 5 x 10(-6) A/cm2 at 90% of breakdown, and a capacitance of 0.4 pF for a front-side illuminated device. Both experimental and analytical results show that the double-diffused floating guard ring structure prevents edge breakdown, and also greatly reduces the electric field along the semiconductor/insulator surface. The operation mechanisms and the optimum design of the planar APD based on a two-dimensional device model are discussed.

引用

页码：182 / 193

页数：12

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