ETCHING OF SILICON AND SILICON DIOXIDE BY HALOFLUOROCARBON PLASMAS

被引：12

作者：

OCCHIELLO, E ^{[1
]}

GARBASSI, F ^{[1
]}

COBURN, JW ^{[1
]}

机构：

[1] IBM,ALMADEN RES CTR,SAN JOSE,CA 95120

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1989年 / 22卷 / 07期

关键词：

D O I：

10.1088/0022-3727/22/7/018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：983 / 988

页数：6

共 17 条

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[8] EFFECT OF ION-BOMBARDMENT ON THE PLASMA-ASSISTED ETCHING AND DEPOSITION OF PLASMA PERFLUOROPOLYMER THIN-FILMS [J].

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[9] SI(LVV) AUGER-SPECTRA OF AMORPHOUS SI-OXIDE, SI-NITRIDE, AND SI-OXINITRIDE [J].

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