HIGH-EFFICIENCY GAAS SOLAR-CELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：19

作者：

MELLOCH, MR

TOBIN, SP

STELLWAG, TB

BAJGAR, C

KESHAVARZI, A

LUNDSTROM, MS

EMERY, K

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

[2] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.585031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：379 / 383

页数：5

共 16 条

[11] EFFECT OF IMPURITY TRAPPING ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF N-GAAS N-ALGAAS HETEROJUNCTIONS [J].

TAN, KL ;

LUNDSTROM, MS ;

MELLOCH, MR .

APPLIED PHYSICS LETTERS, 1986, 48 (06) :428-430

[12] DEVICE PROCESSING AND ANALYSIS OF HIGH-EFFICIENCY GAAS CELLS [J].

TOBIN, SP ;

VERNON, SM ;

BAJGAR, C ;

GEOFFROY, LM ;

KEAVNEY, CJ ;

SANFACON, MM ;

HAVEN, VE .

SOLAR CELLS, 1988, 24 (1-2) :103-115

[13]

TOBIN SP, 1987, 19TH IEEE PHOT SPEC, P70

[14]

TOBIN SP, 1990, IEEE T ELECTRON DEV, V37, P467

[15]

TOBIN SP, 1989, 4TH INT PHOT SCI ENG

[16] PARTICULATES - AN ORIGIN OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY [J].

WENG, SL ;

WEBB, C ;

CHAI, YG ;

BANDY, SG .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :391-393

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