EFFECT OF IMPURITY TRAPPING ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF N-GAAS N-ALGAAS HETEROJUNCTIONS

被引：19

作者：

TAN, KL ^{[1
]}

LUNDSTROM, MS ^{[1
]}

MELLOCH, MR ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 06期

关键词：

D O I：

10.1063/1.96520

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：428 / 430

页数：3

共 13 条

[1] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS [J].

DRUMMOND, TJ ;

KLEM, J ;

ARNOLD, D ;

FISCHER, R ;

THORNE, RE ;

LYONS, WG ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1983, 42 (07) :615-617

[2]

GALE RP, 1984, 17TH P IEEE PHOT SPE, P1422

[3]

KOPP W, 1983, APPL PHYS LETT, V42, P615

[4] DETERMINATION OF HETEROJUNCTION BAND OFFSETS BY CAPACITANCE-VOLTAGE PROFILING THROUGH NONABRUPT ISOTYPE HETEROJUNCTIONS [J].

KROEMER, H .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :504-505

[5] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING [J].

KROEMER, H ;

CHIEN, WY ;

HARRIS, JS ;

EDWALL, DD .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :295-297

[6] OBSERVATION OF DEEP LEVELS ASSOCIATED WITH THE GAAS ALXGA1-X AS INTERFACE GROWN BY MOLECULAR-BEAM EPITAXY [J].

MCAFEE, SR ;

LANG, DV ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :520-522

[7] EXTRINSIC LAYER AT ALXGA1-XAS-GAAS INTERFACES [J].

MILLER, RC ;

TSANG, WT ;

MUNTEANU, O .

APPLIED PHYSICS LETTERS, 1982, 41 (04) :374-376

[8] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE [J].

MORKOC, H ;

WITKOWSKI, LC ;

DRUMMOND, TJ ;

STANCHAK, CM ;

CHO, AY ;

STREETMAN, BG .

ELECTRONICS LETTERS, 1980, 16 (19) :753-754

[9] DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITIES OF GAAS/ALXGA1-XAS INTERFACES BY CAPACITANCE-VOLTAGE MEASUREMENTS [J].

OKUMURA, H ;

MISAWA, S ;

YOSHIDA, S ;

GONDA, S .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :377-379

[10]

OKUMURA H, 1985, 2ND INT C YAM C MOD

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