HIGH BIT RATE MODULATION OF NARROW-STRIP PROTON-IMPLANTED GAAS-GAALAS INJECTION-LASERS

被引：3

作者：

LINDSTROM, C ^{[1
]}

TIHANYI, P ^{[1
]}

ANDERSSON, T ^{[1
]}

TORPHAMMAR, P ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,DEPT ELECT MEASUREMENTS,S-40220 GOTHENBURG 5,SWEDEN

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 15期

关键词：

D O I：

10.1049/el:19800399

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：575 / 577

页数：3

共 8 条

[1] MODULATION BEHAVIOR OF SEMICONDUCTOR INJECTION-LASERS [J].

ARNOLD, G ;

RUSSER, P .

APPLIED PHYSICS, 1977, 14 (03) :255-268

[2]

BAACK C, 1978, FREQUENZ, V32, P346, DOI 10.1515/FREQ.1978.32.12.346

[3] EFFECTS OF LATERAL MODE AND CARRIER DENSITY PROFILE ON DYNAMIC BEHAVIORS OF SEMICONDUCTOR-LASERS [J].

CHINONE, N ;

AIKI, K ;

NAKAMURA, M ;

ITO, R .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (08) :625-631

[4] OBSERVATIONS OF SELF-FOCUSING IN STRIPE GEOMETRY SEMICONDUCTOR-LASERS AND DEVELOPMENT OF A COMPREHENSIVE MODEL OF THEIR OPERATION [J].

KIRKBY, PA ;

GOODWIN, AR ;

THOMPSON, GHB ;

SELWAY, PR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) :705-719

[5] LASING CHARACTERISTICS OF VERY NARROW PLANAR STRIPE LASERS [J].

KOBAYASHI, T ;

KAWAGUCHI, H ;

FURUKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (04) :601-607

[6] KINK-FREE NARROW-STRIPE PROTON-ISOLATED GAALAS-GAAS INJECTION-LASERS [J].

LINDSTROM, C ;

TIHANYI, P .

ELECTRONICS LETTERS, 1980, 16 (04) :121-123

[7] MULTIPLEXER AT 5 GBIT-S FOR FIBER-OPTICAL COMMUNICATION-SYSTEMS [J].

TELL, R ;

TORPHAMMAR, P ;

ENG, ST .

ELECTRONICS LETTERS, 1977, 13 (25) :765-766

[8] MINIMIZING PATTERN EFFECTS IN SEMICONDUCTOR-LASERS AT HIGH-RATE PULSE-MODULATION [J].

TORPHAMMAR, P ;

TELL, R ;

EKLUND, H ;

JOHNSTON, AR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (11) :1271-1276

← 1 →