KINK-FREE NARROW-STRIPE PROTON-ISOLATED GAALAS-GAAS INJECTION-LASERS

被引：6

作者：

LINDSTROM, C

TIHANYI, P

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 04期

关键词：

D O I：

10.1049/el:19800091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：121 / 123

页数：3

共 14 条

[1] STABILIZED ZINC DIFFUSED-PROTON BOMBARDED (GAAL)AS LASER [J].

BOULEY, JC ;

LANDREAU, J ;

DELPECH, P ;

GED, P .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :767-771

[2] STATISTICAL STUDY OF THE RELIABILITY OF OXIDE-DEFINED STRIPE CW LASERS OF (ALGA)AS [J].

ETTENBERG, M .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1195-1202

[3] AGING CHARACTERISTICS OF GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS BONDED WITH GOLD EUTECTIC ALLOY SOLDER [J].

FUJIWARA, K ;

FUJIWARA, T ;

HORI, K ;

TAKUSAGAWA, M .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :668-670

[4]

FURUYA, 1978, APPL OPT, V17, P1949

[5]

GOODWIN, 1979, 5TH EUR C OPT COMM A

[6] CHANNELLED-SUBSTRATE NARROW-STRIPE GAAS-GAAIAS INJECTION-LASERS WITH EXTREMELY LOW THRESHOLD CURRENTS [J].

KIRKBY, PA .

ELECTRONICS LETTERS, 1979, 15 (25) :824-826

[7] 13MUM WIDE STRIPE CW GAAS-GAALAS DH LASERS LINEAR TO MORE THAN 10 MW [J].

LINDSTROM, C ;

JANSON, M .

ELECTRONICS LETTERS, 1978, 14 (06) :172-174

[8] ION PROBE TECHNIQUE FOR STUDY OF GALLIUM DIFFUSION IN SILICON-NITRIDE FILMS [J].

LODDING, A ;

LUNDKVIST, L .

THIN SOLID FILMS, 1975, 25 (02) :491-500

[9]

MARSCHALL P, 1978, 4TH EUR C OPT COMM G

[10] SPECTRAL AND TRANSIENT-RESPONSE OF LOW-THRESHOLD PROTON-ISOLATED-(GAAL)AS LASERS [J].

MATTHEWS, MR ;

STEVENTON, AG .

ELECTRONICS LETTERS, 1978, 14 (19) :649-651

← 1 2 →