SPECTRAL AND TRANSIENT-RESPONSE OF LOW-THRESHOLD PROTON-ISOLATED-(GAAL)AS LASERS

被引：6

作者：

MATTHEWS, MR

STEVENTON, AG

机构：

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 19期

关键词：

D O I：

10.1049/el:19780436

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：649 / 651

页数：3

共 11 条

[1] DYNAMIC BEHAVIOR OF SEMICONDUCTOR LASERS [J].

BOERS, PM ;

VLAARDINGERBROEK, MT .

ELECTRONICS LETTERS, 1975, 11 (10) :206-208

[2] IMPROVED LIGHT-OUTPUT LINEARITY IN STRIPE-GEOMETRY DOUBLE-HETEROSTRUCTURE (AL,GA)AS LASERS [J].

DIXON, RW ;

NASH, FR ;

HARTMAN, RL ;

HEPPLEWHITE, RT .

APPLIED PHYSICS LETTERS, 1976, 29 (06) :372-374

[3]

IKEGAMI T, 1975, 1ST EUR C OPT FIBR C

[4] DYNAMIC BEHAVIOR OF BURIED HETEROSTRUCTURE LASER [J].

KOBAYASHI, T ;

TAKAHASHI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) :2025-2026

[5] LASING CHARACTERISTICS OF VERY NARROW PLANAR STRIPE LASERS [J].

KOBAYASHI, T ;

KAWAGUCHI, H ;

FURUKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (04) :601-607

[6] THERMAL-RESISTANCE MODELS FOR PROTON-ISOLATED DOUBLE-HETEROSTRUCTURE LASERS [J].

NEWMAN, DH ;

BOND, DJ ;

STEFANI, J .

IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1978, 2 (02) :41-46

[7] TEMPERATURE-DEPENDENCE OF DEGRADATION MECHANISMS IN LONG-LIVED (GAAL)AS DH LASERS [J].

RITCHIE, S ;

GODFREY, RF ;

WAKEFIELD, B ;

NEWMAN, DH .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3127-3132

[8] EFFECT OF DC BIAS LEVEL ON SPECTRUM OF GAAS LASERS OPERATED WITH SHORT PULSES [J].

SELWAY, PR ;

GOODWIN, AR .

ELECTRONICS LETTERS, 1976, 12 (01) :25-26

[9] INTENSITY NOISE IN MULTIMODE GAAS LASER EMISSION [J].

SMITH, AW ;

ARMSTRONG, JA .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (03) :225-+

[10] LOW THRESHOLD CURRENT PROTON-ISOLATED (GAAL)AS DOUBLE HETEROSTRUCTURE LASERS [J].

STEVENTON, AG ;

FIDDYMENT, PJ ;

NEWMAN, DH .

OPTICAL AND QUANTUM ELECTRONICS, 1977, 9 (06) :519-525

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