DETECTION OF RECOMBINATION CENTERS IN EPITAXIAL LAYERS BY TEMPERATURE SCANNING AND DEPTH LIFETIME PROFILING

The capability of a recently proposed test structure to extract from temperature scanning the energy distribution of minority-carrier recombination centers and their spatial distribution along thin epilayers is examined. Applications of this technique on processed n-type epilayers show that, besides a deep level, there is a second shallow level with a spatial distribution increasing toward the epilayer-substrate interface, probably outdiffused from the substrate during the epi growth.