MINORITY-CARRIER RECOMBINATION IN HEAVILY-DOPED SILICON

被引：238

作者：

TYAGI, MS ^{[1
]}

VANOVERSTRAETEN, R ^{[1
]}

机构：

[1] CATHOLIC UNIV LEUVEN,ESAT LAB,B-3030 HEVERLE,BELGIUM

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 06期

关键词：

D O I：

10.1016/0038-1101(83)90174-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：577 / 597

页数：21

共 92 条

[1] SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE GROUP 4 SEMICONDUCTORS [J].

ALEXANDER, MN ;

HOLCOMB, DF .

REVIEWS OF MODERN PHYSICS, 1968, 40 (04) :815-+

[2] OPTICAL-CONSTANTS OF VARIOUS HEAVILY DOPED PARA-TYPE SILICON-CRYSTALS AND NORMAL-TYPE SILICON-CRYSTALS OBTAINED BY KRAMERS-KRONIG ANALYSIS [J].

BARTA, E .

INFRARED PHYSICS, 1977, 17 (05) :319-329

[3] AUGER EFFECT IN SEMICONDUCTORS [J].

BEATTIE, AR ;

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29

[4] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION [J].

BEATTIE, AR ;

SMITH, G .

PHYSICA STATUS SOLIDI, 1967, 19 (02) :577-&

[5] AUGER-RECOMBINATION IN SI [J].

BECK, JD ;

CONRADT, R .

SOLID STATE COMMUNICATIONS, 1973, 13 (01) :93-95

[6]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[7]

BLINOV LM, 1968, FIZ TVERD TELA+, V9, P2537

[8] ENHANCED GOLD SOLUBILITY EFFECT IN HEAVILY N-TYPE SILICON [J].

CAGNINA, SF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) :498-&

[9] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].

CAUGHEY, DM ;

THOMAS, RE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+

[10]

CAUGHEY DM, 1975, SOLID ST ELECTRON, V18, P579

← 1 2 3 4 5 6 7 8 9 10 →