MINORITY-CARRIER RECOMBINATION IN HEAVILY-DOPED SILICON

被引：238

作者：

TYAGI, MS ^{[1
]}

VANOVERSTRAETEN, R ^{[1
]}

机构：

[1] CATHOLIC UNIV LEUVEN,ESAT LAB,B-3030 HEVERLE,BELGIUM

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 06期

关键词：

D O I：

10.1016/0038-1101(83)90174-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：577 / 597

页数：21

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