FIELD-EFFECT MEASUREMENTS ON HGCDTE SURFACE

[1] BRAU MJ, UNPUBLISHED

[2] CARTER DL, 1970, P C SEMIMETALS NARRO

[3] SURFACE INVERSION AND ACCUMULATION OF ANODIZED INSB (MOS CAPACITANCE 77 DEGREES K OXIDATION AU DEPOSITION DEVICE FABRICATION E/T) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (08) : 210 - &

[4] SURFACE CAPACITY OF OXIDE COATED SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 211 - &

[5] PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 321 - +

[6] Kolodziejczak J., 1961, ACTA PHYS POL A, V20, P289

[7] MANY A, 1965, SEMICONDUCTOR SURFAC, pCH5

[8] CALCULATION OF CAPACITANCE OF SEMICONDUCTOR SURFACE WITH APPLICATION TO SILICON [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (05) : 496 - &

[9] REYNOLDS RA, TO BE PUBLISHED

[10] REYNOLDS RA, 1969, 3 INT C PHOT STANF

[1] BRAU MJ, UNPUBLISHED

[2] CARTER DL, 1970, P C SEMIMETALS NARRO

[3] SURFACE INVERSION AND ACCUMULATION OF ANODIZED INSB (MOS CAPACITANCE 77 DEGREES K OXIDATION AU DEPOSITION DEVICE FABRICATION E/T) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (08) : 210 - &

[4] SURFACE CAPACITY OF OXIDE COATED SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 211 - &

[5] PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 321 - +

[6] Kolodziejczak J., 1961, ACTA PHYS POL A, V20, P289

[7] MANY A, 1965, SEMICONDUCTOR SURFAC, pCH5

[8] CALCULATION OF CAPACITANCE OF SEMICONDUCTOR SURFACE WITH APPLICATION TO SILICON [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (05) : 496 - &

[9] REYNOLDS RA, TO BE PUBLISHED

[10] REYNOLDS RA, 1969, 3 INT C PHOT STANF