A GENERALIZED INTEGRAL CHARGE-CONTROL RELATION AND ITS APPLICATION TO COMPACT MODELS FOR SILICON-BASED HBTS

被引：24

作者：

SCHROTER, M ^{[1
]}

FRIEDRICH, M ^{[1
]}

REIN, HM ^{[1
]}

机构：

[1] RUHR UNIV BOCHUM,ARBEITSGRP HALBLEITERBAUELEMENTE,D-44780 BOCHUM,GERMANY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 11期

关键词：

D O I：

10.1109/16.239746

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A generalized version of Gummel's ''Integral Charge-Control Relation'' (ICCR) is derived, which-in contrast to the classical ICCR-is valid also for HBT's. As a drawback of this ''generalized ICCR'' (GICCR) the required separation of the total minority charge q(f) into the contributions of the different transistor regions is not possible by measurements. Therefore, a simplified version of the GICCR is presented the parameters of which can be determined experimentally in a simple manner for the operating range of interest. This approach is well suited as a powerful basis for the development of compact HBT models for circuit simulation. The validity of the different approaches is verified by one- and two-dimensional device simulation for several practical SiGe-base HBT's with different doping profiles and Ge mole fractions.

引用

页码：2036 / 2046

页数：11

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