INTRINSIC BISTABILITY AND HOLE-CHARGE BUILDUP IN ASYMMETRIC P-TYPE RESONANT-TUNNELING STRUCTURES

被引：8

作者：

HAYDEN, RK

EAVES, L

HENINI, M

MAUDE, DK

PORTAL, JC

机构：

[1] CNRS,SERV NATL CHAMPS INTENSES,F-38042 GRENOBLE,FRANCE

[2] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

[3] INST NATL SCI APPL,PHYS SOLIDES LAB,F-31077 TOULOUSE,FRANCE

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.49.10745

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A p-doped resonant-tunneling device with tunnel barriers having different transmission coefficients is investigated. The magneto-oscillations observed in the tunnel current when a quantizing magnetic field is applied along the direction of current flow are used to measure the resonant space-charge buildup in the quantum well. For one bias direction, intrinsic bistability is observed on one of the resonant peaks in the current-voltage characteristics.

引用

收藏

页码：10745 / 10748

页数：4

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