OXIDATION OF SILICON IN RF INDUCED OXYGEN PLASMA

被引：10

作者：

SHARMA, SK

CHAKRAVARTY, BC

SINGH, SN

DAS, BK

机构：

[1] Division of Materials, National Physical Laboratory, New Delhi

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1990年 / 9卷 / 08期

关键词：

D O I：

10.1007/BF00722196

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：982 / 984

页数：3

共 15 条

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