MICROWAVE-DISCHARGE PLASMA OXIDATION OF SILICON IN A CUSP MAGNETIC-FIELD

被引:11
作者
KIMURA, S
MURAKAMI, E
WARABISAKO, T
SUNAMI, H
机构
关键词
D O I
10.1149/1.2096197
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2009 / 2012
页数:4
相关论文
共 14 条
[1]   FORMATION OF ULTRATHIN OXIDE-FILMS ON SILICON IN RF OXYGEN PLASMA [J].
ATANASOVA, ED ;
KIROV, KI ;
KANTARDJEVA, EI .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01) :73-80
[2]   THEORY OF THE OXIDATION OF METALS [J].
CABRERA, N ;
MOTT, NF .
REPORTS ON PROGRESS IN PHYSICS, 1948, 12 :163-184
[3]  
Chen F F, 1965, PLASMA DIAGNOSTIC TE
[4]   PLASMA ANODIZATION OF GAAS IN A DC DISCHARGE [J].
CHESLER, LA ;
ROBINSON, GY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1525-1529
[5]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[6]  
GOURRIER S, 1981, PLASMA CHEM PLASMA P, V1, P217
[7]   PLASMA ANODIZATION OF SILICON AND ITS APPLICATION TO THE FABRICATION OF DEVICES AND INTEGRATED-CIRCUITS [J].
HO, VQ ;
SUGANO, T .
THIN SOLID FILMS, 1982, 95 (04) :315-326
[8]   THERMAL-OXIDATION OF SILICON IN VARIOUS OXYGEN PARTIAL PRESSURES DILUTED BY NITROGEN [J].
KAMIGAKI, Y ;
ITOH, Y .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) :2891-2896
[9]  
KIMURA S, 1987, MATER RES SOC, V75, P787
[10]   LOW-TEMPERATURE OXIDATION OF SILICON IN A MICROWAVE-DISCHARGED OXYGEN PLASMA [J].
KIMURA, SI ;
MURAKAMI, E ;
MIYAKE, K ;
WARABISAKO, T ;
SUNAMI, H ;
TOKUYAMA, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) :1460-1466