PLASMA ANODIZATION OF SILICON AND ITS APPLICATION TO THE FABRICATION OF DEVICES AND INTEGRATED-CIRCUITS

被引：12

作者：

HO, VQ

SUGANO, T

机构：

来源：

THIN SOLID FILMS | 1982年 / 95卷 / 04期

关键词：

D O I：

10.1016/0040-6090(82)90037-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：315 / 326

页数：12

共 11 条

[1] TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2 [J].

BASSOUS, E ;

YU, HN ;

MANISCALCO, V .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1729-1737

[2] INFLUENCE OF FILM STRESS AND THERMAL-OXIDATION ON GENERATION OF DISLOCATIONS IN SILICON [J].

BOHG, A ;

GAIND, AK .

APPLIED PHYSICS LETTERS, 1978, 33 (10) :895-897

[3] ANODIZATION OF SILICON IN RF INDUCED OXYGEN PLASMA [J].

HO, VQ ;

SUGANO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :103-106

[4]

HO VQ, 1980, IEEE T ELECTRON DEV, V27, P1436, DOI 10.1109/T-ED.1980.20053

[5]

HO VQ, 1980, IEEE T ELECTRON DEVI, V27, P1060

[6]

HO VQ, 1982, IEEE T ELECTRON DEVI, V28, P487

[7] DEFECT FORMATION DURING HIGH-PRESSURE, LOW-TEMPERATURE STEAM OXIDATION OF SILICON [J].

KATZ, LE ;

KIMERLING, LC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) :1680-1683

[8] SILICON OXIDATION IN AN OXYGEN PLASMA EXCITED BY MICROWAVES [J].

LIGENZA, JR .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2703-+

[9]

MCCAUGHAN EV, 1973, INT J ELECTRON, V34, P737

[10] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J].

NICOLLIA.EH ;

BERGLUND, CN ;

SCHMIDT, PF ;

ANDREWS, JM .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5654-&

← 1 2 →