DEFECT FORMATION DURING HIGH-PRESSURE, LOW-TEMPERATURE STEAM OXIDATION OF SILICON

被引：24

作者：

KATZ, LE ^{[1
]}

KIMERLING, LC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 10期

关键词：

D O I：

10.1149/1.2131272

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1680 / 1683

页数：4

共 24 条

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DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[3]

Hashimoto H., 1977, Fujitsu Scientific and Technical Journal, V13, P73

[4] ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING-FAULTS IN SILICON [J].

HU, SM .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :165-167

[5] EXTRINSIC STACKING FAULTS IN SILICON AFTER HEATING IN WET OXYGEN [J].

JACCODINE, RJ ;

DRUM, CM .

APPLIED PHYSICS LETTERS, 1966, 8 (01) :29-+

[6]

JENKINS M, 1974, MAY EL SOC EXT ABSTR, P79

[7]

KATZ LE, UNPUBLISHED

[8]

KIMERLING LC, 1977, SEMICONDUCTOR SILICO, P468

[9]

MAYER HJ, 1976, RAD EFFECTS SEMICOND, P186

[10] CAPACITANCE TRANSIENT SPECTROSCOPY [J].

MILLER, GL ;

LANG, DV ;

KIMERLING, LC .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448

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