ANODIZATION OF SILICON IN RF INDUCED OXYGEN PLASMA

被引：21

作者：

HO, VQ

SUGANO, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S1.103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：103 / 106

页数：4

相关论文

共 11 条

[1] TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2
BASSOUS, E
YU, HN
MANISCALCO, V
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) : 1729 - 1737
[2] CHARACTERISTICS OF PLASMA-OXIDIZED NITRIDE MOS STRUCTURES
BHATTACHARYYA, AB
CHAUDHARI, PK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (12) : 2012 - 2014
[3] DEFECTS IN SILICON SUBSTRATES
HU, SM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 17 - 31
[4] SILICON OXIDE FILMS GROWN IN A MICROWAVE DISCHARGE
KRAITCHMAN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) : 4323 - +
[5] STACKING FAULTS IN ANNEALED SILICON SURFACES
LAWRENCE, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 360 - &
[6] IONIC CURRENT AS A FUNCTION OF FIELD IN OXIDE DURING PLASMA ANODIZATION OF TANTALUM AND NIOBIUM
LEE, WL
OLIVE, G
PULFREY, DL
YOUNG, L
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (09) : 1172 - +
[7] SILICON OXIDATION IN AN OXYGEN PLASMA EXCITED BY MICROWAVES
LIGENZA, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2703 - +
[8] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .2. INFLUENCE OF PROCESSING AND MATERIALS
OSBURN, CM
ORMOND, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) : 597 - +
[9] KINETICS OF PLASMA ANODIZATION OF ALUMINUM
PROPP, M
YOUNG, L
PULFREY, DL
OLIVE, G
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 891 - 897
[10] PREPARATION AND PROPERTIES OF PLASMA-ANODIZED SILICON DIOXIDE FILMS
PULFREY, DL
RECHE, JJH
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (06) : 627 - +