HIGH-PERFORMANCE MESFETS IN MOCVD-GROWN GALLIUM-ARSENIDE ON SILICON

被引：4

作者：

WARNER, DJ

BRADLEY, RR

JOYCE, TB

GRIFFITHS, RJM

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 16期

关键词：

D O I：

10.1049/el:19880700

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1029 / 1030

页数：2

共 15 条

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[3]

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[4]

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[8]

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[9] ROOM-TEMPERATURE CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN ON SI [J].

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[10] A DC AND MICROWAVE COMPARISON OF GAAS-MESFETS ON GAAS AND SI SUBSTRATES [J].

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SCHEITLIN, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) :206-213

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