CHARACTERISTIC TEMPERATURE T0 OF GA0.83IN0.17AS0.15SB0.85/AL0.27GA0.73AS0.02SB0.98 INJECTION-LASERS

被引：8

作者：

JOULLIE, A

ALIBERT, C

MANI, H

PITARD, F

TOURNIE, E

BOISSIER, G

机构：

[1] CNRS, France

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 17期

关键词：

Lasers; Semiconductor - Semiconducting Gallium Compounds;

D O I：

10.1049/el:19880730

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stripe injection lasers emitting at 2.18 μm at room temperature with a threshold current density Jth = 7-9 kA/cm2 have been prepared from Ga0.83In0.17As0.15Sb0.85/ Al0.27Ga0.73As0.02Sb0.98 double heterojunctions. The characteristic temperature T0 of such devices measured between 80 K and 296 K was found to be T0 = 90 K, essentially controlled by the Auger effect at high temperature.

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页码：1076 / 1078

页数：3

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