CHARACTERISTIC TEMPERATURE T0 OF GA0.83IN0.17AS0.15SB0.85/AL0.27GA0.73AS0.02SB0.98 INJECTION-LASERS

被引:8
作者
JOULLIE, A
ALIBERT, C
MANI, H
PITARD, F
TOURNIE, E
BOISSIER, G
机构
[1] CNRS, France
关键词
Lasers; Semiconductor - Semiconducting Gallium Compounds;
D O I
10.1049/el:19880730
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Stripe injection lasers emitting at 2.18 μm at room temperature with a threshold current density Jth = 7-9 kA/cm2 have been prepared from Ga0.83In0.17As0.15Sb0.85/ Al0.27Ga0.73As0.02Sb0.98 double heterojunctions. The characteristic temperature T0 of such devices measured between 80 K and 296 K was found to be T0 = 90 K, essentially controlled by the Auger effect at high temperature.
引用
收藏
页码:1076 / 1078
页数:3
相关论文
共 10 条
[1]  
ASADA M, 1985, IEEE J QUANTUM ELECT, V21, P431
[2]   ANALYSIS OF THRESHOLD CURRENT-DENSITY IN 2.2-MU-M GAINASSB/GAALASSB-GASB DH LASERS [J].
BROSSON, P ;
BENOIT, J ;
JOULLIE, A ;
SERMAGE, B .
ELECTRONICS LETTERS, 1987, 23 (08) :417-419
[3]   REDUCTION OF THRESHOLD CURRENT-DENSITY OF 2.2-MU-M GAINASSB/ALGAASSB INJECTION-LASERS [J].
CANEAU, C ;
SRIVASTAVA, AK ;
DENTAI, AG ;
ZYSKIND, JL ;
BURRUS, CA ;
POLLACK, MA .
ELECTRONICS LETTERS, 1986, 22 (19) :992-993
[4]   2.2-MU-M GAINASSB ALGAASSB INJECTION-LASERS WITH LOW THRESHOLD CURRENT-DENSITY [J].
CANEAU, C ;
ZYSKIND, JL ;
SULHOFF, JW ;
GLOVER, TE ;
CENTANNI, J ;
BURRUS, CA ;
DENTAI, AG ;
POLLACK, MA .
APPLIED PHYSICS LETTERS, 1987, 51 (10) :764-766
[5]   CW OPERATION OF GALNASSB/ALGAASSB LASERS UP TO 190-K [J].
CANEAU, C ;
SRIVASTAVA, AK ;
ZYSKIND, JL ;
SULHOFF, JW ;
DENTAI, AG ;
POLLACK, MA .
APPLIED PHYSICS LETTERS, 1986, 49 (02) :55-57
[6]   ROOM-TEMPERATURE GAINASSB/ALGAASSB DH INJECTION-LASERS AT 2.2 MU-M [J].
CANEAU, C ;
SRIVASTAVA, AK ;
DENTAI, AG ;
ZYSKIND, JL ;
POLLACK, MA .
ELECTRONICS LETTERS, 1985, 21 (18) :815-817
[7]   ROOM-TEMPERATURE OPERATION OF INGAASSB/ALGASB DOUBLE HETEROSTRUCTURE LASERS NEAR 2.2 MU-M PREPARED BY MOLECULAR-BEAM EPITAXY [J].
CHIU, TH ;
TSANG, WT ;
DITZENBERGER, JA ;
VANDERZIEL, JP .
APPLIED PHYSICS LETTERS, 1986, 49 (17) :1051-1052
[8]   INGASBAS INJECTION-LASERS [J].
DRAKIN, AE ;
ELISEEV, PG ;
SVERDLOV, BN ;
BOCHKAREV, AE ;
DOLGINOV, LM ;
DRUZHININA, LV .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :1089-1094
[9]   CALCULATION OF AUGER COEFFICIENTS FOR III-V SEMICONDUCTORS WITH EMPHASIS ON GASB [J].
HAUG, A ;
KERKHOFF, D ;
LOCHMANN, W .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02) :357-365
[10]   ROOM-TEMPERATURE OPERATION OF THE INGAASSB-ALGAASSB DH LASER AT 1.8 MU-M WAVELENGTH [J].
KOBAYASHI, N ;
HORIKOSHI, Y ;
UEMURA, C .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L30-L32