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EFFECT OF SIOXNY GAUGE INSULATOR ON AMORPHOUS-SILICON THIN-FILM TRANSISTORS

被引：5
作者：
HIRANAKA, K
YAMAGUCHI, T
机构：
[1] Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 02期
关键词：
D O I：
10.1063/1.345794
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of the plasma chemical vapor deposition SiOxN y gate insulator on the threshold voltage for amorphous thin-film transistors was investigated, using different compositions of SiO xNy. The density of trapped charges responsible for the threshold voltage shift was found to be minimum at x/y=0.58. Photoluminescence measurements reveal that the peak energy in the photoluminescence in SiO xNy layers has a maximum value at x/y=0.58. The threshold voltage (Vth) was also found to increase with further increase of x/y. The observed threshold voltage shift is qualitatively interpreted in terms of energy band at the insulator-silicon interface.
引用
收藏
页码：1088 / 1091
页数：4
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