HYDROGEN INCORPORATION IN SILICON (OXY)NITRIDE THIN-FILMS

[1] ABSOLUTE CROSS-SECTION FOR RECOIL DETECTION OF DEUTERIUM [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 459 - 463

[2] ANNEALING OF PLASMA SILICON OXYNITRIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2543 - 2547

[3] TECHNIQUE FOR PROFILING H-1 WITH 2.5-MEV VANDEGRAAFF ACCELERATORS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 811 - 813

[4] HABRAKEN FHP, 1986, J APPL PHYS, V59, P477

[5] DEPOSITION AND COMPOSITION OF SILICON OXYNITRIDE FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 62 - 66

[6] OXIDATION BEHAVIOR OF LPCVD SILICON OXYNITRIDE FILMS [J]. APPLIED SURFACE SCIENCE, 1988, 33-4 : 757 - 764

[7] CHEMICAL EFFECTS ON THE FREQUENCIES OF SI-H VIBRATIONS IN AMORPHOUS SOLIDS [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (08) : 571 - 576

[8] MAES HE, 1983, P S SILICON NITRIDE, V83, P73

[9] PEERCY PS, 1983, P S SILICON NITRIDE, V83, P3

[10] CHEMICALLY BOUND HYDROGEN IN CVD SI3N4 - DEPENDENCE ON NH3/SIH4 RATIO AND ON ANNEALING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 908 - 912

[1] ABSOLUTE CROSS-SECTION FOR RECOIL DETECTION OF DEUTERIUM [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 459 - 463

[2] ANNEALING OF PLASMA SILICON OXYNITRIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2543 - 2547

[3] TECHNIQUE FOR PROFILING H-1 WITH 2.5-MEV VANDEGRAAFF ACCELERATORS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 811 - 813

[4] HABRAKEN FHP, 1986, J APPL PHYS, V59, P477

[5] DEPOSITION AND COMPOSITION OF SILICON OXYNITRIDE FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 62 - 66

[6] OXIDATION BEHAVIOR OF LPCVD SILICON OXYNITRIDE FILMS [J]. APPLIED SURFACE SCIENCE, 1988, 33-4 : 757 - 764

[7] CHEMICAL EFFECTS ON THE FREQUENCIES OF SI-H VIBRATIONS IN AMORPHOUS SOLIDS [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (08) : 571 - 576

[8] MAES HE, 1983, P S SILICON NITRIDE, V83, P73

[9] PEERCY PS, 1983, P S SILICON NITRIDE, V83, P3

[10] CHEMICALLY BOUND HYDROGEN IN CVD SI3N4 - DEPENDENCE ON NH3/SIH4 RATIO AND ON ANNEALING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 908 - 912