OXIDATION BEHAVIOR OF LPCVD SILICON OXYNITRIDE FILMS

被引：7

作者：

KUIPER, AET ^{[1
]}

WILLEMSEN, MFC ^{[1
]}

BAX, JMG ^{[1
]}

HABRAKEN, FHPH ^{[1
]}

机构：

[1] UTRECHT STATE UNIV,DEPT ATOM & INTERFACE PHYS,3508 TA UTRECHT,NETHERLANDS

来源：

APPLIED SURFACE SCIENCE | 1988年 / 33-4卷

关键词：

The authors would like to thank Henry Cox and Michael Nieuwensteeg (Philips Research Laboratories) for sample preparation. Financial support from the European Community; received for ESPRIT project No. 369; is gratefully acknowledged;

D O I：

10.1016/0169-4332(88)90377-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：757 / 764

页数：8

共 12 条

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[7] HYDROGEN IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON (OXY)NITRIDE FILMS [J].

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[8] HYDROGENATION DURING THERMAL NITRIDATION OF SILICON DIOXIDE [J].

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[9] DEPOSITION AND COMPOSITION OF SILICON OXYNITRIDE FILMS [J].

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[10]

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