GE GROWTH ON SI USING ATOMIC-HYDROGEN AS A SURFACTANT

被引：220

作者：

SAKAI, A

TATSUMI, T

机构：

[1] Microelectronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305, 34, Miyukigaoka

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 01期

关键词：

D O I：

10.1063/1.110919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have examined the effect of adsorbed atomic hydrogen (H) on the evolution of Ge films on Si(001) and (111) substrates in solid-source molecular-beam epitaxy. The H flux was supplied separately from the Ge flux. By cross-sectional high-resolution transmission electron microscopy it was observed that H acted as a surfactant during growth, suppressing island formation of Ge on both substrates. The effect of the H surfactant on variation of the growth mode is also discussed.

引用

页码：52 / 54

页数：3

共 20 条

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