A STUDY OF INCLUSIONS IN INDIUM-PHOSPHIDE

被引：17

作者：

AUGUSTUS, PD

STIRLAND, DJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 03期

关键词：

D O I：

10.1149/1.2123936

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：614 / 621

页数：8

相关论文

共 25 条

[1] ALJASSIM MM, 1981, APR OXF C MICR SEM C
[2] AUGUSTUS PD, 1979, UNPUB
[3] SIMPLE ROTATING JET-THINNING APPARATUS FOR PRODUCING TAPER SECTIONS AND ELECTRON-MICROSCOPE SPECIMENS FROM SILICON AND COMPOUND SEMICONDUCTORS
BICKNELL, RW
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (17) : 1991 - &
[4] BONNER WA, 1980, 1980 P NATO INP WORK, P43
[5] ETCH FEATURES IN CZOCHRALSKI-GROWN SINGLE-CRYSTAL INDIUM-PHOSPHIDE
BROWN, GT
COCKAYNE, B
MACEWAN, WR
[J]. JOURNAL OF MATERIALS SCIENCE, 1980, 15 (10) : 2539 - 2549
[6] DISLOCATION CLUSTERS IN CZOCHRALSKI-GROWN SINGLE-CRYSTAL INDIUM-PHOSPHIDE
COCKAYNE, B
BROWN, GT
MACEWAN, WR
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) : 461 - 469
[7] COCKAYNE B, 1980, 1980 P NATO INP WORK, P29
[8] COLLOCOTT TC, 1971, W R CHAMBERS DICT SC
[9] TRANSMISSION ELECTRON-MICROSCOPE OBSERVATIONS OF DAMAGE IN INP INDUCED DURING HANDLING
COMER, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 6003 - 6005
[10] THE DETECTION OF STRUCTURAL DEFECTS IN INDIUM-PHOSPHIDE BY ELECTROCHEMICAL ETCHING
ELLIOTT, CR
REGNAULT, JC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 113 - 116