学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
THE DETECTION OF STRUCTURAL DEFECTS IN INDIUM-PHOSPHIDE BY ELECTROCHEMICAL ETCHING
被引:21
作者
:
ELLIOTT, CR
论文数:
0
引用数:
0
h-index:
0
ELLIOTT, CR
REGNAULT, JC
论文数:
0
引用数:
0
h-index:
0
REGNAULT, JC
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1981年
/ 128卷
/ 01期
关键词
:
D O I
:
10.1149/1.2127349
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:113 / 116
页数:4
相关论文
共 13 条
[1]
ARITA K, 1979, J CRYSTAL GROWTH, V46, P783
[2]
PRELIMINARY STUDY OF DISLOCATIONS IN INDIUM AND GALLIUM PHOSPHIDES
CLARKE, RC
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB, GREAT MALVERN, ENGLAND
ROY RADAR ESTAB, GREAT MALVERN, ENGLAND
CLARKE, RC
ROBERTSON, DS
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB, GREAT MALVERN, ENGLAND
ROY RADAR ESTAB, GREAT MALVERN, ENGLAND
ROBERTSON, DS
VERE, AW
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB, GREAT MALVERN, ENGLAND
ROY RADAR ESTAB, GREAT MALVERN, ENGLAND
VERE, AW
[J].
JOURNAL OF MATERIALS SCIENCE,
1973,
8
(09)
: 1349
-
1354
[3]
ELLIOTT CH, UNPUBLISHED
[4]
ELECTROCHEMICAL SECTIONING AND SURFACE FINISHING OF GAAS AND GASB
ELLIOTT, CR
论文数:
0
引用数:
0
h-index:
0
ELLIOTT, CR
REGNAULT, JC
论文数:
0
引用数:
0
h-index:
0
REGNAULT, JC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(07)
: 1557
-
1562
[5]
DETECTION OF STRUCTURAL DEFECTS IN GAAS BY ELECTROCHEMICAL ETCHING
FAKTOR, MM
论文数:
0
引用数:
0
h-index:
0
FAKTOR, MM
STEVENSON, JL
论文数:
0
引用数:
0
h-index:
0
STEVENSON, JL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(04)
: 621
-
629
[6]
FAKTOR MM, 1980, CURRENT TOPICS MATER, V6, P1
[7]
A POLISHING ETCHANT FOR III-V SEMICONDUCTORS
FULLER, CS
论文数:
0
引用数:
0
h-index:
0
FULLER, CS
ALLISON, HW
论文数:
0
引用数:
0
h-index:
0
ALLISON, HW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(09)
: 880
-
880
[8]
METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP
HUBER, A
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
HUBER, A
LINH, NT
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
LINH, NT
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
29
(01)
: 80
-
84
[9]
PROPERTIES OF TRANSPARENT CONDUCTING FILMS OF SNO2-SB AND IN2O3-SN DEPOSITED BY HYDROLYSIS
KULASZEWICZ, S
论文数:
0
引用数:
0
h-index:
0
KULASZEWICZ, S
LASOCKA, I
论文数:
0
引用数:
0
h-index:
0
LASOCKA, I
MICHALSKI, C
论文数:
0
引用数:
0
h-index:
0
MICHALSKI, C
[J].
THIN SOLID FILMS,
1978,
55
(02)
: 283
-
288
[10]
VAPOR-GROWN 1.3 MU-M INGAASP-INP AVALANCHE PHOTO-DIODES
OLSEN, GH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
OLSEN, GH
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
KRESSEL, H
[J].
ELECTRONICS LETTERS,
1979,
15
(05)
: 141
-
142
←
1
2
→
共 13 条
[1]
ARITA K, 1979, J CRYSTAL GROWTH, V46, P783
[2]
PRELIMINARY STUDY OF DISLOCATIONS IN INDIUM AND GALLIUM PHOSPHIDES
CLARKE, RC
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB, GREAT MALVERN, ENGLAND
ROY RADAR ESTAB, GREAT MALVERN, ENGLAND
CLARKE, RC
ROBERTSON, DS
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB, GREAT MALVERN, ENGLAND
ROY RADAR ESTAB, GREAT MALVERN, ENGLAND
ROBERTSON, DS
VERE, AW
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB, GREAT MALVERN, ENGLAND
ROY RADAR ESTAB, GREAT MALVERN, ENGLAND
VERE, AW
[J].
JOURNAL OF MATERIALS SCIENCE,
1973,
8
(09)
: 1349
-
1354
[3]
ELLIOTT CH, UNPUBLISHED
[4]
ELECTROCHEMICAL SECTIONING AND SURFACE FINISHING OF GAAS AND GASB
ELLIOTT, CR
论文数:
0
引用数:
0
h-index:
0
ELLIOTT, CR
REGNAULT, JC
论文数:
0
引用数:
0
h-index:
0
REGNAULT, JC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(07)
: 1557
-
1562
[5]
DETECTION OF STRUCTURAL DEFECTS IN GAAS BY ELECTROCHEMICAL ETCHING
FAKTOR, MM
论文数:
0
引用数:
0
h-index:
0
FAKTOR, MM
STEVENSON, JL
论文数:
0
引用数:
0
h-index:
0
STEVENSON, JL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(04)
: 621
-
629
[6]
FAKTOR MM, 1980, CURRENT TOPICS MATER, V6, P1
[7]
A POLISHING ETCHANT FOR III-V SEMICONDUCTORS
FULLER, CS
论文数:
0
引用数:
0
h-index:
0
FULLER, CS
ALLISON, HW
论文数:
0
引用数:
0
h-index:
0
ALLISON, HW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(09)
: 880
-
880
[8]
METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP
HUBER, A
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
HUBER, A
LINH, NT
论文数:
0
引用数:
0
h-index:
0
机构:
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
THOMSON CSF LABS CENT RECH,DOMAINE CORBEVILLE,91401 ORSAY,FRANCE
LINH, NT
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
29
(01)
: 80
-
84
[9]
PROPERTIES OF TRANSPARENT CONDUCTING FILMS OF SNO2-SB AND IN2O3-SN DEPOSITED BY HYDROLYSIS
KULASZEWICZ, S
论文数:
0
引用数:
0
h-index:
0
KULASZEWICZ, S
LASOCKA, I
论文数:
0
引用数:
0
h-index:
0
LASOCKA, I
MICHALSKI, C
论文数:
0
引用数:
0
h-index:
0
MICHALSKI, C
[J].
THIN SOLID FILMS,
1978,
55
(02)
: 283
-
288
[10]
VAPOR-GROWN 1.3 MU-M INGAASP-INP AVALANCHE PHOTO-DIODES
OLSEN, GH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
OLSEN, GH
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
KRESSEL, H
[J].
ELECTRONICS LETTERS,
1979,
15
(05)
: 141
-
142
←
1
2
→