TRANSPORT PROCESSES IN SILICON OXIDATION .2. WET OXIDATION

被引：24

作者：

HAGON, JP ^{[1
]}

STONEHAM, AM ^{[1
]}

JAROS, M ^{[1
]}

机构：

[1] AERE,DIV THEORET PHYS,HARWELL OX11 0RA,OXON,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1987年 / 55卷 / 02期

关键词：

D O I：

10.1080/13642818708211205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：225 / 235

页数：11

共 20 条

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[8] TRANSPORT PROCESSES IN SILICON OXIDATION .1. DRY OXIDATION
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STONEHAM, AM
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (02): : 211 - 224
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