TRANSPORT PROCESSES IN SILICON OXIDATION .1. DRY OXIDATION

被引：21

作者：

HAGON, JP ^{[1
]}

STONEHAM, AM ^{[1
]}

JAROS, M ^{[1
]}

机构：

[1] AERE, DIV THEORET PHYS, HARWELL OX11 0RA, OXON, ENGLAND

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1987年 / 55卷 / 02期

关键词：

D O I：

10.1080/13642818708211204

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：211 / 224

页数：14

共 12 条

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[9] MECHANISMS FOR THE OXIDATION OF SILICON AND THE FORMATION OF CHARGED DEFECTS [J].

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