SURFACE AND IN-DEPTH ANALYSIS OF HYDROGENATED CARBON LAYERS ON SILICON AND GERMANIUM BY MASS AND ELECTRON-SPECTROSCOPY

被引：18

作者：

SANDER, P ^{[1
]}

ALTEBOCKWINKEL, M ^{[1
]}

STORM, W ^{[1
]}

WIEDMANN, L ^{[1
]}

BENNINGHOVEN, A ^{[1
]}

机构：

[1] UNIV MUNSTER,INST PHYS,D-4400 MUNSTER,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.584778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：517 / 528

页数：12

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