SURFACE AND IN-DEPTH ANALYSIS OF HYDROGENATED CARBON LAYERS ON SILICON AND GERMANIUM BY MASS AND ELECTRON-SPECTROSCOPY

被引:18
作者
SANDER, P [1 ]
ALTEBOCKWINKEL, M [1 ]
STORM, W [1 ]
WIEDMANN, L [1 ]
BENNINGHOVEN, A [1 ]
机构
[1] UNIV MUNSTER,INST PHYS,D-4400 MUNSTER,FED REP GER
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 03期
关键词
D O I
10.1116/1.584778
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:517 / 528
页数:12
相关论文
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