A THEORY OF GENERATION-RECOMBINATION NOISE FROM THE VELOCITY SATURATED CHANNEL OF A GAAS-MESFET

被引:2
作者
DEBNEY, BT
机构
关键词
D O I
10.1016/0038-1101(81)90049-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:703 / 708
页数:6
相关论文
共 11 条
[2]   THE STATISTICS OF CHARGE CARRIER FLUCTUATIONS IN SEMICONDUCTORS [J].
BURGESS, RE .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (10) :1020-1027
[3]   GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET [J].
GREBENE, AB ;
GHANDHI, SK .
SOLID-STATE ELECTRONICS, 1969, 12 (07) :573-+
[4]  
KITTEL C, 1958, ELEMENTARY STATISTIC, P138
[5]  
MARTIN GM, 1980, P C SEMIINSULATING 3
[6]  
Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6
[7]   A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].
SHOCKLEY, W .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376
[8]   NOISE CHARACTERISTICS OF GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS [J].
STATZ, H ;
HAUS, HA ;
PUCEL, RA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (09) :549-562
[9]   NOISE IN SOLID-STATE DEVICES AND LASERS [J].
VANDERZI.A .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08) :1178-+
[10]  
VANDERZIEL A, 1962, P IRE, V50, P1808