DEGRADATION MECHANISM OF ALGAAS/GAAS LASER-DIODES GROWN ON SI SUBSTRATES

被引：26

作者：

EGAWA, T

HASEGAWA, Y

JIMBO, T

UMENO, M

机构：

[1] Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Showa-ku, Nagoya 466, Gokiso-cho

[2] Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku, Nagoya 466, Gokiso-cho

[3] Research Center for Micro-Structure Devices, Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku, Nagoya 466, Gokiso-cho

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 20期

关键词：

D O I：

10.1063/1.114930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the rapid degradation of the AlGaAs/GaAs single quantum well laser diodes on Si substrates grown by metalorganic chemical vapor deposition. The dislocations propagate at velocities up to similar to 75 mu m/h along [100] and similar to 20 mu m/h along [110], which cause an increase in threshold current and a decrease in differential quantum efficiency. The degraded current-voltage characteristic resulted from the defect-assisted impurity diffusion. The degradation process occurs very rapidly due to the presence of a high density of defects and thermally induced strain. (C) 1995 American Institute of Physics.

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页码：2995 / 2997

页数：3

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