EPSILON-TI2N PHASE GROWTH-CONTROL IN TITANIUM NITRIDE FILMS

被引:36
作者
POULEK, V [1 ]
MUSIL, J [1 ]
CERNY, R [1 ]
KUZEL, R [1 ]
机构
[1] CHARLES UNIV, FAC MATH & PHYS, DEPT SEMICONDUCTOR PHYS, CS-12116 PRAGUE 2, CZECHOSLOVAKIA
关键词
D O I
10.1016/0040-6090(89)90738-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:L55 / L58
页数:4
相关论文
共 6 条
  • [1] ASPLUND M, 1985, 1985 MAT RES SOC FAL
  • [2] DEPOSITION OF TI-N COMPOUNDS BY THERMIONICALLY ASSISTED TRIODE REACTIVE ION PLATING
    MATTHEWS, A
    TEER, DG
    [J]. THIN SOLID FILMS, 1980, 72 (03) : 541 - 549
  • [3] TURNING PERFORMANCE OF REACTIVELY ION PLATED TI-N COATINGS
    MOLARIUS, JM
    KORHONEN, AS
    KANKAANPAA, H
    SULONEN, MS
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06): : 2686 - 2690
  • [4] TI-N PHASES FORMED BY REACTIVE ION PLATING
    MOLARIUS, JM
    KORHONEN, AS
    RISTOLAINEN, EO
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2419 - 2425
  • [5] INFLUENCE OF DEPOSITION RATE ON PROPERTIES OF REACTIVELY SPUTTERED TIN-CHI FILMS
    MUSIL, J
    POULEK, V
    VYSKOCIL, J
    KADLEC, S
    VALVODA, V
    KUZEL, R
    CERNY, R
    [J]. VACUUM, 1988, 38 (06) : 459 - 461
  • [6] POULEK V, 1988, 05888 I PHYS PRAG RE