POSITRON-ANNIHILATION STUDY OF P IMPLANTED SI

被引:5
作者
ASOKAKUMAR, P [1 ]
SFERLAZZO, P [1 ]
AU, HL [1 ]
LYNN, KG [1 ]
机构
[1] EATON CORP,DIV SED,BEVERLY,MA 01915
关键词
D O I
10.1016/0168-583X(93)95020-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
High-energy ion implantation (above 200 keV) is now commonly used in a variety of VLSI processes. The high energy required for these implants is often achieved by implanting multiply charged ions, which inevitably brings in the problem of low-energy ion contamination. The low-energy contamination is difficult to diagnose and detect. Positron annihilation spectroscopy is used to examine the defect distributions in these high energy implants with varying degrees of contamination.
引用
收藏
页码:89 / 93
页数:5
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