DEFECTS IN OXYGEN-IMPLANTED SILICON-ON-INSULATOR STRUCTURES PROBED WITH POSITRONS

被引:21
作者
NIELSEN, B
LYNN, KG
LEUNG, TC
CORDTS, BF
SERAPHIN, S
机构
[1] IBIS TECHNOL CORP,DANVERS,MA 01915
[2] UNIV ARIZONA,TUCSON,AZ 85721
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 04期
关键词
D O I
10.1103/PhysRevB.44.1812
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Defects in a silicon-on-insulator structure formed by high-energy (200-keV) oxygen implantation has been studied utilizing a variable-energy positron beam. The positron-based probe is found to be especially sensitive to the condition of the top Si layer. Open-volume defects (cavities) are detected in the top 80-nm Si layer in the as-irradiated state. The majority of these defects are removed by high-temperature annealing (approximately 1300-degrees-C) after which the positron response correlates with the density of dislocations observed by transmission electron microscopy. Variations in dislocation density across a wafer were probed with positrons, demonstrating the potential of positrons in defect topology.
引用
收藏
页码:1812 / 1816
页数:5
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