PASSIVATION ANALYSIS OF MICROMECHANICAL SILICON STRUCTURES OBTAINED BY ELECTROCHEMICAL ETCH-STOP

被引:14
作者
GOTZ, A [1 ]
ESTEVE, J [1 ]
BAUSELLS, J [1 ]
MARCO, S [1 ]
SAMITIER, J [1 ]
MORANTE, JR [1 ]
机构
[1] UNIV BARCELONA,DEPT FIS APLICADA & ELECTR,LCMM,E-08028 BARCELONA,SPAIN
关键词
D O I
10.1016/0924-4247(93)80126-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The electrochemical etch stop in conjunction with the use of implantations and diffusions provides new possibilities for fabrication of microstructures. The different results obtained with the three- or four-electrode configuration are discussed, as well as the effect of light in every case. The observed phenomena are interpreted in terms of the electrochemical reaction mechanisms. The technological limits of the technique are also commented.
引用
收藏
页码:744 / 750
页数:7
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