ACCURATE INFRARED-SPECTROSCOPY ANALYSIS IN BACK-SIDE DAMAGED SILICON-WAFERS

被引：5

作者：

GARRIDO, B

MORENO, JA

SAMITIER, J

MORANTE, JR

机构：

[1] LCMM, Dept. Fisica Aplicada i Electrònica, Universitat de Barcelona, Barcelona, 08028

来源：

APPLIED SURFACE SCIENCE | 1993年 / 63卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(93)90097-U

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A method to analyze infrared spectra accurately on back-side damaged silicon wafers is proposed. Related theoretical approximations are also presented. The method developed is used to obtain the interstitial oxygen concentration and can be easily extended to other impurities.

引用

收藏

页码：236 / 239

页数：4

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