DETERMINATION OF OXYGEN CONCENTRATION IN SINGLE-SIDE POLISHED CZOCHRALSKI-GROWN SILICON-WAFERS BY PARA-POLARIZED BREWSTER-ANGLE INCIDENCE INFRARED-SPECTROSCOPY

Oxygen concentration has been determined in single-side polished Czochralski-grown silicon wafers as easily and precisely as in double-side polished wafers, by means of p-polarized Brewster angle incidence infrared spectroscopy. Interference fringes due to internal multiple reflections are scarcely observed in the p-polarized Brewster angle incidence absorption spectra of single-side polished wafers with a resolution of 1 cm-1. The infrared absorbance spectra are successfully analyzed to determine oxygen concentration in accordance with Lambert-Beer's law, which does not include multiple reflection contributions.