PROPERTIES OF CDTE/INSB HETEROSTRUCTURES GROWN BY TEMPERATURE-GRADIENT VAPOR TRANSPORT DEPOSITION

Heteroepitaxial films of CdTe were grown by a simple method of temperature gradient vapor transport deposition in InSb(111) orientation substrates in the growth temperature range between 180-degrees-C and 280-degrees-C. Double crystal X-ray diffraction was used to evaluate the crystal quality of the CdTe epitaxial films. The full width at half-maximum intensity of the double crystal diffraction CdTe peak was as small as 30 arcsec. Room temperature capacitance-voltage measurements showed the nominally undoped CdTe layers to be n-type with N(d)-N(a) in the low 10(16) cm-3 region and excellent confinement of electrons at the CdTe/InSb heterointerfaces. Photoluminescence measurements at 15 K showed that the CdTe film grown on InSb(111) at 230-degrees-C appeared to have strong and sharp exciton transitions and weak defect-related bands.