STABILITY OF RF-SPUTTERED ALUMINUM-OXIDE

被引:25
作者
GARDNER, RA [1 ]
PETERSON, PJ [1 ]
KENNEDY, TN [1 ]
机构
[1] IBM CORP,DIV GEN PROD,SAN JOSE,CA 95114
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 05期
关键词
D O I
10.1116/1.569346
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1139 / 1145
页数:7
相关论文
共 29 条
[21]   GROWTH AND ELECTRICAL CHARACTERISTICS OF R F SPUTTERED ALUMINIUM OXIDE [J].
PRATT, IH .
THIN SOLID FILMS, 1969, 3 (04) :R23-&
[22]   IMPURITY EFFECT IN IONIZATION DILATATION OF VITREOUS SILICA [J].
PRIMAK, W ;
KAMPWIRT.R .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) :6010-&
[23]   RADIATION-INDUCED DILATATIONS IN VITREOUS SILICA [J].
PRIMAK, W ;
EDWARDS, E .
PHYSICAL REVIEW, 1962, 128 (06) :2580-&
[24]   CONDUCTION IN AL2O3 FILMS AND CHARGE STORAGE IN MAOS STRUCTURES [J].
SALAMA, CAT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (12) :1993-&
[25]   RF SPUTTERED ALUMINUM OXIDE FILMS ON SILICON [J].
SALAMA, CAT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :913-&
[26]   ARGON CONTENT OF SIO2 FILMS DEPOSITED BY RF SPUTTERING IN ARGON [J].
SCHWARTZ, GC ;
JONES, RE .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :52-&
[27]  
STARODUBTSEV SV, 1961, P TASHKENT C, V1, P283
[28]  
THOMPSON MW, 1969, DEFECTS RADIATION DA
[29]  
[No title captured]