A STUDY OF RADIATION-DAMAGE IN SIN AND SIC MASK MEMBRANES

被引:18
作者
ITOH, M
HORI, M
KOMANO, H
MORI, I
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 06期
关键词
D O I
10.1116/1.585300
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Radiation damage in SiN and SiC films prepared by low-pressure chemical vapor deposition (LPCVD) is reported. A pattern placement error of 0.05-mu-m at the edge of the x-ray radiation area was introduced for SiN membranes by a radiation dose of 12 kJ/cm2. The electron spin resonance (ESR) signals with a g value of 2.004, which was attributed to the Si-N dangling bond, were observed. Both the error and the spin density increased with increasing radiation dose up to 12 kJ/cm2 and remained constant thereafter. The error was explained as the result of Si-N bond scission caused by x-ray radiation, leading to tensile stress relaxation in the radiated area. In the case of SiC films, a pattern placement error was less than a detection limit of 0.03-mu-m for a radiation dose of 10 kJ/cm2. ESR signals with a g value of 2.003, being attributed to the Si-C dangling bond, were observed. However, the spin density in this case did not change by radiation up to 20 kJ/cm2. It is inferred that the LPCVD SiC membrane is damage free to x-ray radiation.
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页码:3262 / 3265
页数:4
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