RADIATION-DAMAGE IN BORON-NITRIDE X-RAY-LITHOGRAPHY MASKS

被引：15

作者：

KING, PL

PAN, L

PIANETTA, P

SHIMKUNAS, A

MAUGER, P

SELIGSON, D

机构：

[1] MICRONIX, LOS GATOS, CA 95030 USA

[2] INTEL CORP, SANTA CLARA, CA 95051 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.584036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：162 / 166

页数：5

共 13 条

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[5] RADIATION-DAMAGE EFFECTS IN BORON-NITRIDE MASK MEMBRANES SUBJECTED TO X-RAY-EXPOSURES [J].

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[6]

King P., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V773, P126, DOI 10.1117/12.940362

[7] PREPARATION AND PROPERTIES OF AMORPHOUS BORON-NITRIDE FILMS BY MOLECULAR-FLOW CHEMICAL VAPOR-DEPOSITION [J].

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[8]

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[9]

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[10]

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