HIGH ELECTRON-MOBILITY IN MODULATION-DOPED SI/SIGE QUANTUM-WELL STRUCTURES

被引：35

作者：

SCHUBERTH, G

SCHAFFLER, F

BESSON, M

ABSTREITER, G

GORNIK, E

机构：

[1] Walter Schottky Institut, Technische Universität München

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 25期

关键词：

D O I：

10.1063/1.105718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Modulation-doped multiple quantum well structures based on Si/SiGe have been grown by molecular beam epitaxy. Low-temperature electron mobilities up to 17 000 cm2/V s have been achieved in narrow Si quantum wells. The electronic properties of the strain symmetrized Si/SiGe multilayer structures were studied by magnetotransport and cyclotron resonance experiments. The results are consistent with subband calculations which take the strain-induced splitting of the conduction band and the lowering of two valleys into account.

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页码：3318 / 3320

页数：3

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