RAMAN-SCATTERING FROM OVAL DEFECTS IN GAAS EPILAYERS

被引：6

作者：

KHULBE, PK ^{[1
]}

DOBAL, PS ^{[1
]}

BIST, HD ^{[1
]}

MEHTA, SK ^{[1
]}

MURALIDHARAN, R ^{[1
]}

JAIN, RK ^{[1
]}

机构：

[1] SOLID STATE PHYS LAB,DELHI 110059,INDIA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.109982

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Micro-Raman investigations have been carried out at various spots in and around oval defects in epitaxially grown [100] GaAs wafers. Changes in the crystalline orientation have been observed within the oval defect structure as compared to the normal region. However, the crystalline quality of these defects remain equally good. These oval defects also possess a deviation in stoichiometry, corroborating to the conclusions of other studies.

引用

收藏

页码：488 / 490

页数：3

相关论文

共 20 条

[1] RECENT ADVANCES IN ULTRA-HIGH-SPEED HEMT TECHNOLOGY [J].

ABE, M ;

MIMURA, T ;

NISHIUCHI, K ;

SHIBATOMI, A ;

KOBAYASHI, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1870-1879

[2] PHONON SHIFTS IN ION BOMBARDED GAAS - RAMAN MEASUREMENTS [J].

BURNS, G ;

DACOL, FH ;

WIE, CR ;

BURSTEIN, E ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1987, 62 (07) :449-454

[3] ELIMINATION OF GALLIUM-SOURCE RELATED OVAL DEFECTS IN MOLECULAR-BEAM EPITAXY OF GAAS [J].

CHAND, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02) :160-162

[4] A COMPREHENSIVE STUDY AND METHODS OF ELIMINATION OF OVAL DEFECTS IN MBE-GAAS [J].

CHAND, N ;

CHU, SNG .

JOURNAL OF CRYSTAL GROWTH, 1990, 104 (02) :485-497

[5]

DESNICA UV, 1982, J APPL PHYS, V71, P2591

[6] CLASSIFICATION AND ORIGINS OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY [J].

FUJIWARA, K ;

KANAMOTO, K ;

OHTA, YN ;

TOKUDA, Y ;

NAKAYAMA, T .

JOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) :104-112

[7] MODEL FOR LONG-WAVELENGTH OPTICAL-PHONON MODES OF MIXED-CRYSTALS [J].

GENZEL, L ;

MARTIN, TP ;

PERRY, CH .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1974, 62 (01) :83-92

[8] MICRO-RAMAN SPECTROSCOPY OF CARBON CLUSTER COMPOSITES [J].

GRIGORYAN, LS ;

BIST, HD ;

SATHAIAH, S ;

SHARMA, SV ;

CLARA, H ;

MAJUMDAR, AK .

JOURNAL OF RAMAN SPECTROSCOPY, 1992, 23 (02) :127-129

[9] SOME INVESTIGATIONS ON OVAL DEFECTS IN MBE-GROWN GAAS [J].

MEHTA, SK ;

MURALIDHARAN, R ;

SHARDA, GD ;

JAIN, RK .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (05) :635-640

[10] OBSERVATION OF INTERACTION OF PLASMONS WITH LONGITUDINAL OPTICAL PHONONS IN GAAS [J].

MOORADIAN, A ;

WRIGHT, GB .

PHYSICAL REVIEW LETTERS, 1966, 16 (22) :999-+