ELIMINATION OF GALLIUM-SOURCE RELATED OVAL DEFECTS IN MOLECULAR-BEAM EPITAXY OF GAAS

被引：11

作者：

CHAND, N

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.584845

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：160 / 162

页数：3

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