REDUCTION AND ORIGIN OF ELECTRON AND HOLE TRAPS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：24

作者：

CHAND, N

SERGENT, AM

VANDERZIEL, JP

LANG, DV

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584760

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：399 / 404

页数：6

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