SOME INVESTIGATIONS ON OVAL DEFECTS IN MBE-GROWN GAAS

被引：11

作者：

MEHTA, SK

MURALIDHARAN, R

SHARDA, GD

JAIN, RK

机构：

[1] Solid State Phys. Lab., Delhi

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 05期

关键词：

D O I：

10.1088/0268-1242/7/5/003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the results of studies on the morphological features and chemical composition of the prominent types of oval defects present on GaAs and GaAlAs epitaxial layers grown by molecular beam epitaxy (MBE) are reported. Based on these studies, a possible mechanism for the formation of cored oval defects is proposed. The influence of this defect on the performance of MODFETS is also discussed.

引用

收藏

页码：635 / 640

页数：6

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共 21 条

[1] RECENT ADVANCES IN ULTRA-HIGH-SPEED HEMT TECHNOLOGY [J].

ABE, M ;

MIMURA, T ;

NISHIUCHI, K ;

SHIBATOMI, A ;

KOBAYASHI, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1870-1879

[2] MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS [J].

BAFLEUR, M ;

MUNOZYAGUE, A ;

ROCHER, A .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) :531-538

[3] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHAI, YG ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :796-798

[4] ELIMINATION OF GALLIUM-SOURCE RELATED OVAL DEFECTS IN MOLECULAR-BEAM EPITAXY OF GAAS [J].

CHAND, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02) :160-162

[5] A COMPREHENSIVE STUDY AND METHODS OF ELIMINATION OF OVAL DEFECTS IN MBE-GAAS [J].

CHAND, N ;

CHU, SNG .

JOURNAL OF CRYSTAL GROWTH, 1990, 104 (02) :485-497

[6] ADVANCES IN MOLECULAR-BEAM EPITAXY (MBE) [J].

CHO, AY .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :1-13

[7] ELIMINATION OF GAAS OVAL DEFECTS AND HIGH-THROUGHPUT FABRICATION OF SELECTIVELY DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES BY MBE [J].

FRONIUS, H ;

FISCHER, A ;

PLOOG, K .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :169-174

[8] CLASSIFICATION AND ORIGINS OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY [J].

FUJIWARA, K ;

KANAMOTO, K ;

OHTA, YN ;

TOKUDA, Y ;

NAKAYAMA, T .

JOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) :104-112

[9] INITIAL RESULTS OF A HIGH THROUGHPUT MBE SYSTEM FOR DEVICE FABRICATION [J].

HWANG, JCM ;

BRENNAN, TM ;

CHO, AY .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :493-496

[10] MORPHOLOGICAL-STUDIES OF OVAL DEFECTS IN GAAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MATTESON, S ;

SHIH, HD .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :47-49